Metalorganic vapour phase epitaxy (MOVPE)

  • Metalorganic vapour phase epitaxy (MOVPE

Metalorganic vapour phase epitaxy (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or

metalorganic chemical vapour deposition (MOCVD),[1] is a chemical vapour deposition method used
to produce single or polycrystalline thin films. It is a highly complex process for growing
crystalline layers to create complex semiconductor multilayer structures.[2] In contrast to molecular beam epitaxy (MBE) the growth of crystals is by chemical reaction and not physical deposition. This takes place not in a vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys[citation needed], and it has become a major process in the manufacture of optoelectronics.